 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at T case 25 o C Storage Temperature Max Operating Junction Temperature Value 80 80 5 4 0.1 40 -65 to 150 150 Unit V V V A A W o o C C For PNP types voltage and current values are negative. January 1997 1/4 MJE802-MJ803 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max 3.13 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO T case = 100 o C V CE = rated V CEO V EB = 5 V I C = 50 mA IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A IC = 4 A I C = 1.5 A I C = 1.5 A f = 1 MHz I B = 40 mA I B = 30 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 100 750 1 80 3 2.5 3 2.5 Min. Typ. Max. 100 500 100 2 Unit A A A mA V V V V V I CEO I EBO Collector-Emitter V CEO(sus) Sustaining Voltage (I B = 0) V CE(sat) V BE h FE hfe Collector-Emitter Sustaining Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain * Pulsed: Pulse duration = 300s, duty cycle 1.5% 2/4 MJE802-MJ803 SOT-32 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H 3 7.4 10.5 0.7 0.49 2.4 1.2 15.7 2.2 4.4 3.8 3.2 2.54 0.118 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.04 0.047 0.618 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 DIM. 0016114 3/4 MJE802-MJ803 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 4/4 |
Price & Availability of MJE802
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |